- Schottky barrier contact
- Электроника: контакт с барьером Шоттки
Универсальный англо-русский словарь. Академик.ру. 2011.
Универсальный англо-русский словарь. Академик.ру. 2011.
Schottky barrier — A Schottky barrier is a potential barrier formed at a metal semiconductor junction which has rectifying characteristics, suitable for use as a diode. The largest differences between a Schottky barrier and a p n junction are its typically lower… … Wikipedia
Schottky diode — The Schottky diode (named after German physicist Walter H. Schottky; also known as hot carrier diode) is a semiconductor diode with a low forward voltage drop and a very fast switching action.In the early days of wireless, cat s whisker detectors … Wikipedia
Schottky, Walter — ▪ German physicist born July 23, 1886, Zürich, Switz. died March 4, 1976, Pretzfeld, W.Ger. German physicist whose research in solid state physics and electronics yielded many devices that now bear his name. Schottky obtained… … Universalium
Schottky-Barriere auf der Basis von organischen Schichten — organinių plėvelių Šotkio barjeras statusas T sritis radioelektronika atitikmenys: angl. organic on organic contact barrier vok. Schottky Barriere auf der Basis von organischen Schichten, f rus. барьер Шотки на основе плёнок органических… … Radioelektronikos terminų žodynas
Ohmic contact — An ohmic contact is a region on a semiconductor device that has been prepared so that the current voltage (I V) curve of the device is linear and symmetric. If the I V characteristic is non linear and asymmetric, the contact is not ohmic, but is… … Wikipedia
Surface-barrier transistor — The surface barrier transistor is a type of transistor developed by Philco in 1953 as an improvement to the alloy junction transistor and the earlier point contact transistor. Like the modern schottky transistor, it offered much higher speed than … Wikipedia
organic-on-organic contact barrier — organinių plėvelių Šotkio barjeras statusas T sritis radioelektronika atitikmenys: angl. organic on organic contact barrier vok. Schottky Barriere auf der Basis von organischen Schichten, f rus. барьер Шотки на основе плёнок органических… … Radioelektronikos terminų žodynas
barrière Schottky à la base des films organiques — organinių plėvelių Šotkio barjeras statusas T sritis radioelektronika atitikmenys: angl. organic on organic contact barrier vok. Schottky Barriere auf der Basis von organischen Schichten, f rus. барьер Шотки на основе плёнок органических… … Radioelektronikos terminų žodynas
Metal-induced gap states — In bulk semiconductor band structure calculations, it is assumed that the crystal lattice (which features a periodic potential due to the atomic structure) of the material is infinite. When the finite size of a crystal is taken into account, the… … Wikipedia
Metal-semiconductor junction — is a type of junction in which a metal comes in close contact with a semiconductor material. Similar to a p n junction, it has rectifying properties. History The rectification property of metal semiconductor contacts was discovered by Ferdinand… … Wikipedia
Metal–semiconductor junction — In solid state physics, a metal–semiconductor junction is a type of junction in which a metal comes in close contact with a semiconductor material. Similar to a p n junction, it has rectifying properties. History The rectification property of… … Wikipedia